JPH0312768B2 - - Google Patents

Info

Publication number
JPH0312768B2
JPH0312768B2 JP58216372A JP21637283A JPH0312768B2 JP H0312768 B2 JPH0312768 B2 JP H0312768B2 JP 58216372 A JP58216372 A JP 58216372A JP 21637283 A JP21637283 A JP 21637283A JP H0312768 B2 JPH0312768 B2 JP H0312768B2
Authority
JP
Japan
Prior art keywords
layer
polysilicon
silicon dioxide
reactive ion
contact
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58216372A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59139675A (ja
Inventor
Richaado Gosu Jooji
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS59139675A publication Critical patent/JPS59139675A/ja
Publication of JPH0312768B2 publication Critical patent/JPH0312768B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H10D10/421—Vertical BJTs having both emitter-base and base-collector junctions ending at the same surface of the body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/40—Vertical BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
  • Drying Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
JP58216372A 1982-12-30 1983-11-18 接点層の開口の側壁に絶縁分離部分を形成する方法 Granted JPS59139675A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US45491982A 1982-12-30 1982-12-30
US454919 1995-05-31

Publications (2)

Publication Number Publication Date
JPS59139675A JPS59139675A (ja) 1984-08-10
JPH0312768B2 true JPH0312768B2 (en]) 1991-02-21

Family

ID=23806611

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58216372A Granted JPS59139675A (ja) 1982-12-30 1983-11-18 接点層の開口の側壁に絶縁分離部分を形成する方法

Country Status (1)

Country Link
JP (1) JPS59139675A (en])

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB8525458D0 (en) * 1985-10-16 1985-11-20 British Telecomm Positioning optical components & waveguides

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57211775A (en) * 1981-06-23 1982-12-25 Nec Corp Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS59139675A (ja) 1984-08-10

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